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Comprehensive Analysis on Characteristics of SiC Power Device

Received: 6 April 2016     Published: 7 April 2016
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Abstract

Analyzing the research status and development trend of SiC (Silicon Carbide) power device, this article describes the latest research results of switching characteristics and power loss characteristics of SiC power device. With detailed analysis on switching characteristics of Schottky Barrier Diode (SBD) and MOSFET, this paper emphasizes on the differences between them and the corresponding power devices. The comparison study between power loss characteristics of MPS and valve loss of silicon carbide thyristor for ultra-high voltage, also and the differences in power loss of switching power supply between SiC MOSFET and Si MOSFET provide scientific basis for the optimal selection and application of SiC power device.

Published in Journal of Electrical and Electronic Engineering (Volume 4, Issue 2)
DOI 10.11648/j.jeee.20160402.13
Page(s) 18-23
Creative Commons

This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.

Copyright

Copyright © The Author(s), 2016. Published by Science Publishing Group

Keywords

SiC, Power Device, Switching Characteristics, Power Loss Characteristics

References
[1] Qian Zhaoming, Sheng Kuang. Development and perspective of high power semiconductor device [J]. Converter Technology & Electric Traction, 2010, (1): 1-9.
[2] Chen Zhiming, Li Shouzhi. Wide band gap semiconductor power electronic devices and their applications [M]. Beijing: China Machine Press, 2009.
[3] Agarwal A K. An overview of SiC power devices [A]. ICPCES 2010 [C]. 2010, 1-4.
[4] Agarwal A, Callanan R, Das M, et al. Advanced HF SiC MOS devices [A]. Power Electronics and Applications, 13th European Conference 2009 [C]. 2009. 1, 8-10.
[5] Jiang Dung, Burgos R, Wang Fei, et al. Temperature-dependent characteristic of SiC devices: performance evaluation and loss calculation [J]. IEEE Transactions on Power Electronics, 2012, 27(2): 1013-1024.
[6] Glaser J S, Nasadoski J J, Losee P A, et al. Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications [A]. APEC2011 [C]. 2011. 1049-1056.
[7] Alatise O, Parker-Allotey N A, Mawby P. The dynamic performance of SiC Schottky barrier diodes with parasitic inductances over a wide temperature range [A]. PEMD2012 [C]. 2012, 1-6.
[8] Zhao Bin, Qin Haihong, Ma Ceyu, et al. Exploration of switching characteristics of SiC-based power devices[J]. Advanced Technology of Electrical Engineering and Energy, 2014, 33(3): 18-22.
[9] http://www.cree.com/.
[10] http://www.ixys.com/.
[11] Niu Xinjun, Zhang Yuming, Zhang Yinmen, et al. Analysis of Power Dissioation Characteristics of MPS Based on SiC [J]. RESEARCH & PROGRESS OF SSE, 2003, 23(2): 193-198.
[12] Zhang Yuming, Study on silicon carbide materials and devices, doctoral dissertation, Xi'an Jiao Tong University, 1998. 4.
[13] IEC61803-1999, Determination of power losses in high-voltage direct current converter [S].
[14] Cepek M. Loss measurement in high voltage thyristor valves [J]. IEEE Trans on Power Delivery, 1994, 9(3): 1222-1236.
[15] Kimbark E W. Direct current transmission: Vol. I [M]. New York: John & Sons, Inc, 1971: 21-25.
[16] Uhlmann E. Power transmission by direct current [M]. Heidelberg, New York: Springer-Verlag Berlin, 1995: 37-41.
[17] Jin Rui, Lei Linxu, Wen Jialiang, et al. Discussion on Power Loss of HVDC Converter Valves Adopting Silicon Carbide Thyristors [J]. Power System Technology, 2011, 35(3): 8-13.
[18] Wen Jialiang, Zha Kunpeng, Gao Chong, et al. Research and development of whole-set operational test UHVDC thyristor valves [J]. Power System Technology, 2010, 34(8): 1-5.
[19] Sha Zhanyou, Wang Yanpeng, Ma Hongtao, etc, Optimal design of switching power supply [M]. Beijing: China Electric Power Press, 2009: 260-261.
[20] Hosseini Aghdam M G, Thiringer T. Comparison of SiC and Si power semiconductor devices to be used in 2.5 kW DC-DC converter[C]. International Conference on Power Electronics and Drive Systems, PEDS, 2009: 1035-1040.
[21] Nathabhat Pankong, Tsuyoshi Funaki, Takashi Hikihara. Characterization of the gate-voltage dependency of input capacitance in a SiC MOSFET [J]. IEICE Electronics Express, 2010, 7(7): 480-486.
[22] Cao Hongkui, Chen Zhibo, Meng Linan. Comparative Analysis of SiC MOSFET Power Losses in Switching Power Supply [J]. Journal of Liaoning University of Technology (Natural Science Edition), 2014, 34(2): 82-85.
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  • APA Style

    Shi Mingming, Lu Wenwei, Ge Le. (2016). Comprehensive Analysis on Characteristics of SiC Power Device. Journal of Electrical and Electronic Engineering, 4(2), 18-23. https://doi.org/10.11648/j.jeee.20160402.13

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    ACS Style

    Shi Mingming; Lu Wenwei; Ge Le. Comprehensive Analysis on Characteristics of SiC Power Device. J. Electr. Electron. Eng. 2016, 4(2), 18-23. doi: 10.11648/j.jeee.20160402.13

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    AMA Style

    Shi Mingming, Lu Wenwei, Ge Le. Comprehensive Analysis on Characteristics of SiC Power Device. J Electr Electron Eng. 2016;4(2):18-23. doi: 10.11648/j.jeee.20160402.13

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  • @article{10.11648/j.jeee.20160402.13,
      author = {Shi Mingming and Lu Wenwei and Ge Le},
      title = {Comprehensive Analysis on Characteristics of SiC Power Device},
      journal = {Journal of Electrical and Electronic Engineering},
      volume = {4},
      number = {2},
      pages = {18-23},
      doi = {10.11648/j.jeee.20160402.13},
      url = {https://doi.org/10.11648/j.jeee.20160402.13},
      eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20160402.13},
      abstract = {Analyzing the research status and development trend of SiC (Silicon Carbide) power device, this article describes the latest research results of switching characteristics and power loss characteristics of SiC power device. With detailed analysis on switching characteristics of Schottky Barrier Diode (SBD) and MOSFET, this paper emphasizes on the differences between them and the corresponding power devices. The comparison study between power loss characteristics of MPS and valve loss of silicon carbide thyristor for ultra-high voltage, also and the differences in power loss of switching power supply between SiC MOSFET and Si MOSFET provide scientific basis for the optimal selection and application of SiC power device.},
     year = {2016}
    }
    

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  • TY  - JOUR
    T1  - Comprehensive Analysis on Characteristics of SiC Power Device
    AU  - Shi Mingming
    AU  - Lu Wenwei
    AU  - Ge Le
    Y1  - 2016/04/07
    PY  - 2016
    N1  - https://doi.org/10.11648/j.jeee.20160402.13
    DO  - 10.11648/j.jeee.20160402.13
    T2  - Journal of Electrical and Electronic Engineering
    JF  - Journal of Electrical and Electronic Engineering
    JO  - Journal of Electrical and Electronic Engineering
    SP  - 18
    EP  - 23
    PB  - Science Publishing Group
    SN  - 2329-1605
    UR  - https://doi.org/10.11648/j.jeee.20160402.13
    AB  - Analyzing the research status and development trend of SiC (Silicon Carbide) power device, this article describes the latest research results of switching characteristics and power loss characteristics of SiC power device. With detailed analysis on switching characteristics of Schottky Barrier Diode (SBD) and MOSFET, this paper emphasizes on the differences between them and the corresponding power devices. The comparison study between power loss characteristics of MPS and valve loss of silicon carbide thyristor for ultra-high voltage, also and the differences in power loss of switching power supply between SiC MOSFET and Si MOSFET provide scientific basis for the optimal selection and application of SiC power device.
    VL  - 4
    IS  - 2
    ER  - 

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Author Information
  • Jiangsu Electric Power Research Institute, Nanjing, China

  • Nanjing Institute of Technology, Nanjing, China

  • Nanjing Institute of Technology, Nanjing, China

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